Intermediate scaling regime for multilayer epitaxial growth
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.8602/fulltext
Reference16 articles.
1. Dynamics of film growth of GaAs by MBE from Rheed observations
2. Damped oscillations in reflection high energy electron diffraction during GaAs MBE
3. Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)
4. Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A
5. Photoemission oscillations during epitaxial growth
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