Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
Author:
Funder
Narodowe Centrum Nauki
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.241304/fulltext
Reference44 articles.
1. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
2. Size control of InAs quantum dashes
3. On the nature of quantum dash structures
4. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices
5. The effect of structural parameters on the in-plane coupling between quantum dashes of a dense ensemble in the InAs-InP material system
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