Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells-Reference-Cited by-同舟云学术

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Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells

Published:2018-07-16 Issue:4 Volume:98 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Knebl G.,Pfeffer P.,Schmid S.,Kamp M.,Bastard G.,Batke E.,Worschech L.,Hartmann F.,Höfling S.

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.041301/fulltext

Reference38 articles.

1. Z2Topological Order and the Quantum Spin Hall Effect

2. Quantum Spin Hall Effect

3. Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

4. Colloquium: Topological insulators

5. Quantum Spin Hall Insulator State in HgTe Quantum Wells

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells;Physical Review B;2024-03-27

2. Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells;New Journal of Physics;2023-02-01

3. Exploring the phase diagram of InAs/GaSb/InAs trilayer quantum wells;Physical Review B;2022-04-11

4. Charge transport spectra in superconductor-InAs/GaSb-superconductor heterostructures;Nanotechnology;2021-12-02

5. Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field*;Chinese Physics B;2019-09-01

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