Shear-deformation-potential constant of the conduction-band minima of Si: Experimental determination by the deep-level capacitance transient method
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14040/fulltext
Reference33 articles.
1. Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
2. Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes
3. Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon
4. Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium
5. Effects of Uniaxial Stress on the Indirect Exciton Spectrum of Silicon
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3. Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors;Applied Physics Letters;2007-09-24
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