Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy-Reference-Cited by-同舟云学术

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Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy

Published:2006-05-24 Issue:20 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Placidi E.,Hogan C.,Arciprete F.,Fanfoni M.,Patella F.,Del Sole R.,Balzarotti A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.205345/fulltext

Reference31 articles.

1. Origin of the optical anisotropy of GaAs (001)

2. Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) andGa1−xInxAs(001)

3. Hydrogen induced structure changes of GaAs(100) c(4 × 4), (2 × 4) and (4 × 2) surfaces

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1. InP and AlInP(001)(2 × 4) Surface Oxidation from Density Functional Theory;ACS Omega;2021-02-25

2. Ab Initio Theory of Interband Transitions;Springer Handbook of Surface Science;2020

3. Electronic properties of GaAsBi(001) alloys at low Bi content;Physical Review Materials;2019-04-05

4. Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001);Applied Physics Letters;2014-04-07

5. Simulation of the oxidation pathway on Si(100) using high-resolution EELS;physica status solidi (b);2012-04-04

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