Tight-binding study of the electronic structure of amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.6768/fulltext
Reference21 articles.
1. Defects in Amorphous Silicon: A New Perspective
2. Mechanisms for peculiar low-temperature phenomena in hydrogenated amorphous silicon
3. Defect dynamics and the Staebler-Wronski effect in hydrogenated amorphous silicon
4. Dangling or floating bonds in amorphous silicon?
5. Quantitative analysis of EPR and electron-nuclear double resonance spectra ofDcenters in amorphous silicon: Dangling versus floating bonds
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1. Studies of the electronic and vibrational signatures of the unusual bonding geometries in melt-quenched amorphous silicon;Molecular Physics;2009-12-10
2. Point defects in pure amorphous silicon and their role in structural relaxation: A tight-binding molecular-dynamics study;Physical Review B;2008-04-09
3. Dependence of the vibrational spectra of amorphous silicon on the defect concentration and ring distribution;Journal of Physics: Condensed Matter;1999-11-17
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