Controlling the hybridization gap and transport in a thin-film topological insulator: Effect of strain, and electric and magnetic field-Reference-Cited by-同舟云学术

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Controlling the hybridization gap and transport in a thin-film topological insulator: Effect of strain, and electric and magnetic field

Published:2022-07-13 Issue:3 Volume:106 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Shafiei Mohammad,Fazileh Farhad,Peeters François M.,Milošević Milorad V.

Funder

Isfahan University of Technology

Iran Science Elites Federation

Fonds Wetenschappelijk Onderzoek

Fonds De La Recherche Scientifique - FNRS

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.106.035119/fulltext

Reference43 articles.

1. Gate-voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator

2. A topological Dirac insulator in a quantum spin Hall phase

3. Strain-driven tunable topological states in Bi2Se3

4. Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in Sb2Te3/Bi2Te3 heterojunctions

5. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

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