Mechanisms forp-type behavior of ZnO,Zn1−xMgxO, and related oxide semiconductors
Author:
Funder
European Commission
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.075140/fulltext
Reference57 articles.
1. Compensation mechanism for N acceptors in ZnO
2. Possiblep-type doping with group-I elements in ZnO
3. Defect properties andp-type doping efficiency in phosphorus-doped ZnO
4. Origin ofp-type doping difficulty in ZnO: The impurity perspective
5. Doping by Large-Size-Mismatched Impurities: The Microscopic Origin of Arsenic- or Antimony-Dopedp-Type Zinc Oxide
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