Conversion pathways of primary defects by annealing in proton-irradiated n -type 4H -SiC
Author:
Funder
University of Oslo
Research Council of Norway
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.184111/fulltext
Reference44 articles.
1. A review on single photon sources in silicon carbide
2. Spin and photophysics of carbon-antisite vacancy defect in4Hsilicon carbide: A potential quantum bit
3. Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
4. Defects and carrier compensation in semi-insulating4H−SiCsubstrates
5. High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime
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