Bulk electronic structure of silicon studied with angle-resolved photoemission from the Si(100)2×1 surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.8991/fulltext
Reference36 articles.
1. Well-Known "Surface State" on Si(111)2×1 Identified as a Bulk Contribution
2. Bulk and surface electronic structures of Si(111)2×1 and Si(111)7×7 studied by angle-resolved photoelectron spectroscopy
3. Angle-resolved photoemission studies of Ge(111)-c(2×8), Ge(111)-(1×1)H, Si(111)-(7×7), and Si(100)-(2×1)
4. Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies
5. Synchrotron photoemission studies of the Sb-passivated Si surfaces: Degenerate doping and bulk band dispersions
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