Free-carrier effects in gallium nitride epilayers: Valence-band dispersion
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.081203/fulltext
Reference19 articles.
1. Cyclotron resonance on galliumnitride in fields up to 700T generated by explosive driven flux compression
2. Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
3. Electron effective mass in hexagonal GaN
4. Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN
5. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
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1. Valence band structure and effective masses of GaN(101¯0);Physical Review B;2019-05-17
2. Valence band tomography of wurtzite GaN by spectroscopic ellipsometry;Applied Physics Express;2018-08-30
3. Photoelectron scattering in a p-GaN(Cs,O) photocathode;Journal of Physics: Conference Series;2018-03
4. Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy;Physical Review B;2016-12-19
5. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy;Physical Review B;2014-06-23
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