Ab initioinvestigation of Bi-covered GaSb(110) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.2688/fulltext
Reference22 articles.
1. Adsorption of group-V elements on III–V (1 1 0) surfaces
2. Structural characterization of the (1 monolayer Sb)/GaP(110) interface using x-ray standing waves
3. Dynamical low-energy electron-diffraction analysis of bismuth and antimony epitaxy on GaAs(110)
4. Vibrationally resolved photoelectron-spin-polarization spectroscopy of HI molecules
5. Antimony adsorption on InAs(110)
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1. Giant Rashba system on a semiconductor substrate with tunable Fermi level: Bi/GaSb(110)–(2×1);Physical Review Materials;2019-12-02
2. First-principles study of atomic and electronic structure of Bi/InP (001)-α 2 (2 × 4) and β 2 (2 × 4) surfaces;Materials Research Express;2019-08-07
3. Theoretical investigation of charge accumulation layer on the Bi-induced InAs(111)-(2 × 2) surface;Journal of Applied Physics;2014-04-28
4. Comparative study of clean and Bi-induced(2×4)reconstruction on the InP(001) surface;Physical Review B;2009-03-13
5. Atomic-scale theoretical investigations of compound semiconductor surfaces;Applied Surface Science;2005-05
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