One-dimensional electronic states inGa2Se3on Si(001):As-Reference-Cited by-同舟云学术

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One-dimensional electronic states inGa2Se3on Si(001):As

Published:2010-06-15 Issue:24 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lovejoy T. C.,Yitamben E. N.,Ohta T.,Fain S. C.,Ohuchi F. S.,Olmstead M. A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.245313/fulltext

Reference15 articles.

1. The role of vacancies and local distortions in the design of new phase-change materials

2. Structure of Phase Change Materials for Data Storage

3. X-ray-induced conductivity in gallium sesqui-selenide

4. Efficient Annealing of Radiation Damage Near Grain Boundaries via Interstitial Emission

5. Lattice dynamics of tetrahedrally bonded semiconductors containing ordered vacant sites

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Allotropic Ga₂Se₃/GaSe nanostructures grown by van der Waals epitaxy: narrow exciton lines and single-photon emission;Nanoscale;2024

2. Theoretical study ofGa2Se3,Ga2Te3andGa2(Se1-xTex)3: Band-gap engineering;Acta Materialia;2014-06

3. First-principles study of the structure and band structure of Ga2Se3;Journal of Physics: Condensed Matter;2013-05-15

4. Controlling the growth morphology and phase segregation of Mn-doped Ga2Se3on Si(001);Physical Review B;2011-04-18

5. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001);Physical Review B;2011-01-28

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