Effect of localization on photoluminescence and zero-field splitting of silicon color centers-Reference-Cited by-同舟云学术

Effect of localization on photoluminescence and zero-field splitting of silicon color centers

Published:2022-10-17 Issue:13 Volume:106 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ivanov Vsevolod^ORCID,Simoni Jacopo^ORCID,Lee Yeonghun,Liu Wei,Jhuria Kaushalya,Redjem Walid,Zhiyenbayev Yertay^ORCID,Papapanos Christos^ORCID,Qarony Wayesh,Kanté Boubacar,Persaud Arun^ORCID,Schenkel Thomas,Tan Liang Z.^ORCID

Funder

National Science Foundation

Alexander S. Onassis Public Benefit Foundation

Office of Science

Fusion Energy Sciences

U.S. Department of Energy

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.106.134107/fulltext

Reference48 articles.

1. Silicon-Integrated Telecommunications Photon-Spin Interface

2. Identification of a Telecom Wavelength Single Photon Emitter in Silicon

3. Coherence of spin qubits in silicon

4. Quantum technologies with optically interfaced solid-state spins

5. A bright future for silicon in quantum technologies

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