Cross-sectional scanning tunneling microscope study of a boron-implanted Si wafer
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.1948/fulltext
Reference39 articles.
1. Electrical activation of boron-implanted silicon during rapid thermal annealing
2. High‐concentration boron diffusion in silicon: Simulation of the precipitation phenomena
3. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction
4. Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study
5. Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfaces
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3. Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution;Journal of Applied Physics;2011-11-15
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