H passivation of shallow acceptors in Si studied by use of the perturbed-γγ-angular-correlation technique-Reference-Cited by-同舟云学术

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H passivation of shallow acceptors in Si studied by use of the perturbed-γγ-angular-correlation technique

Published:1992-07-15 Issue:4 Volume:46 Page:2172-2182
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Skudlik H.,Deicher M.,Keller R.,Magerle R.,Pfeiffer W.,Pross P.,Recknagel E.,Wichert Th.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.2172/fulltext

Reference48 articles.

1. Deactivation of the boron acceptor in silicon by hydrogen

2. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen

3. Neutralization of acceptors in silicon by atomic hydrogen

4. Hydrogen in crystalline semiconductors

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