Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorGa1−xMnxAs-Reference-Cited by-同舟云学术

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Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorGa1−xMnxAs

Published:1997-11-15 Issue:20 Volume:56 Page:13103-13112
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Van Esch A.,Van Bockstal L.,De Boeck J.,Verbanck G.,van Steenbergen A. S.,Wellmann P. J.,Grietens B.,Bogaerts R.,Herlach F.,Borghs G.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.13103/fulltext

Reference24 articles.

1. Diluted magnetic semiconductors

2. Diluted magnetic III-V semiconductors

3. Nanometer‐scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy

4. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

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