Ground-state properties of the electron-hole liquid in Ge under〈111〉uniaxial stress
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.19.2117/fulltext
Reference17 articles.
1. Condensation of excitons in germanium and silicon
2. Electron-Hole Liquids in Semiconductors
3. Electron-hole liquid in many-band systems. I. Ge and Si under large uniaxial strain
4. Density and binding energy of electron-hole droplets in uniformly stressed germanium
5. Electron-hole liquid in germanium under infinite uniaxial compression
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1. Mode-coupling model of Mott gap collapse in the cuprates: Natural phase boundary for quantum critical points;Physical Review B;2004-11
2. Electron-hole liquid in germanium under high〈111〉stress;Physical Review B;1989-08-15
3. The electron-hole liquid in a semiconductor;Uspekhi Fizicheskih Nauk;1985
4. Evidence for separate Mott and liquid-gas transitions in photoexcited, strained germanium;Physical Review B;1984-03-15
5. Ground-state properties, thermodynamics and systematics of electron-hole liquid in Ge and Si under uniaxial stress;Journal of Physics C: Solid State Physics;1983-02-10
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