Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces-Reference-Cited by-同舟云学术

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Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

Published:2015-02-26 Issue:7 Volume:91 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Deng Hui-Xiong,Luo Jun-Wei,Wei Su-Huai

Funder

Chinese Academy of Sciences

National Natural Science Foundation of China

U.S. Department of Energy

National Renewable Energy Laboratory, Office of Energy Efficiency and Renewable Energy

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.075315/fulltext

Reference44 articles.

1. Interface-bond-polarity model for semiconductor heterojunction band offsets

2. Local interface composition and band discontinuities in heterovalent heterostructures

3. GaN:ZnO Solid Solution as a Photocatalyst for Visible-Light-Driven Overall Water Splitting

4. Controlling the native stacking fault density in II-VI/III-V heterostructures

5. Band offsets and band bending at heterovalent semiconductor interfaces

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