Nucleation of Ge dots on the C-alloyed Si(001) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.125312/fulltext
Reference12 articles.
1. In situ scanning tunneling microscopy study of C-induced Ge quantum dot formation on Si(100)
2. Formation of carbon-induced germanium dots
3. Dimer Pairing on the C-Alloyed Si(001) Surface
4. A UHV STM for in situ characterization of MBE/CVD growth on 4-inch wafers
5. Interplay of Stress, Structure, and Stoichiometry in Ge-Covered Si(001)
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1. Efficient Visible Photoluminescence from Self-Assembled Ge QDs Embedded in Silica Matrix;Chinese Physics Letters;2017-06
2. Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate;Thin Solid Films;2017-01
3. Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing;Microelectronic Engineering;2014-08
4. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001);Applied Physics Letters;2014-01-06
5. Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi;ECS Transactions;2013-03-15
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