Interpretation of amorphous semiconductor threshold switching based on new decay-time data
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.2025/fulltext
Reference24 articles.
1. Disappearance of the barrier offset voltage in the on‐state characteristics of a chalcogenide threshold switch for short relaxations of holding voltages
2. Transformation from Ohmic to offset behavior for the on state of an amorphous semiconductor threshold switch for interruptions greater than 12 ns
3. Nature of the on-state in chalcogenide glass threshold switches
4. Characteristics and mechanism of threshold switching
5. Maintenance of threshold on‐state of an amorphous semiconductor by cw bias: Effects of temperature, frequency, and bias interruption
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1. Charge Carrier Transfer at High Electric Fields in Noncrystalline Semiconductors;Semiconductors and Semimetals;2004
2. Interpretation of recent transient on-state data in thin chalcogenide glass and NbO2 threshold switching material;Philosophical Magazine B;1991-03
3. Interpretation of Recent On-State and Previous Negative Capacitance Data in Threshold Chalcogenide Amorphous Switch;Disorder and Order in the Solid State;1988
4. Asymmetry of the transient on-state characteristics of a threshold switching noncrystalline chalcogenide semiconductor;Physical Review B;1987-06-15
5. I–U Characteristics of Non-Crystalline AsSeCd Thin Films;physica status solidi (a);1985-06-16
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