Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.115324/fulltext
Reference17 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Intrinsic multiple quantum well spatial light modulators
3. Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect
4. Effect of column III vacancy on arsenic precipitation in low-temperature grown III–V arsenides
5. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
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