Induced fractional valley number in graphene with topological defects-Reference-Cited by-同舟云学术

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Induced fractional valley number in graphene with topological defects

Published:2015-01-07 Issue:3 Volume:91 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Obispo Angel E.,Hott Marcelo

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.035404/fulltext

Reference46 articles.

1. Electron Fractionalization in Two-Dimensional Graphenelike Structures

2. The Band Theory of Graphite

3. Condensed-Matter Simulation of a Three-Dimensional Anomaly

4. Chiral Gauge Theory for Graphene

5. Continuum approximation to fullerene molecules

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On valley asymmetry in a topological interaction for quasi-particles;Annals of Physics;2023-12

2. Graphene under the influence of Aharonov-Bohm flux and constant magnetic field;Physical Review B;2016-09-01

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