Observation of dynamic annealing effects in oxide single crystals after high-dose18O+implantation at 500 °C
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.5668/fulltext
Reference23 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose region
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