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Gate electrostatics and quantum capacitance in ballistic graphene devices

Published:2019-05-06 Issue:19 Volume:99 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Caridad José M.,Power Stephen R.,Shylau Artsem A.,Gammelgaard Lene,Jauho Antti-Pekka,Bøggild Peter

Funder

Danmarks Grundforskningsfond

Horizon 2020

H2020 Marie Skłodowska-Curie Actions

Irish Research Council

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.195408/fulltext

Reference41 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Size quantization of Dirac fermions in graphene constrictions

4. Conductance quantization suppression in the quantum Hall regime

5. Quantum Hall transport as a probe of capacitance profile at graphene edges

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime;Physical Review B;2021-11-15

2. Unraveling the electronic properties of graphene with substitutional oxygen;2D Materials;2021-10-01

3. Upstream modes and antidots poison graphene quantum Hall effect;Nature Communications;2021-07-12

4. Electrostatics of metal–graphene interfaces: sharp p–n junctions for electron-optical applications;Nanoscale;2019

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