Surface stoichiometry determination using reflection high-energy electron diffraction and atomic-layer epitaxy: The case of ZnTe(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.7822/fulltext
Reference15 articles.
1. Heavyp‐doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source
2. Graded band gap ohmic contact top‐ZnSe
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5. The Mechanisms of MBE and ALE Growth of ZnTe on GaAs(100) Substrates
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