Temperature dependence of the fundamental edge of germanium and zinc-blende-type semiconductors-Reference-Cited by-同舟云学术

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Temperature dependence of the fundamental edge of germanium and zinc-blende-type semiconductors

Published:1975-10-15 Issue:8 Volume:12 Page:3258-3267
ISSN:0556-2805
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Camassel J.,Auvergne D.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.12.3258/fulltext

Reference29 articles.

1. Temperature Dependence of the Energy Gap in Semiconductors

2. Temperature Dependence of the Wavelength-Modulation Spectra of GaAs

3. Temperature Dependence of the Energy Gap in GaAs

4. Temperature Coefficient of the Refractive Index of Diamond- and Zinc-Blende-Type Semiconductors

5. Temperature Dependence of Energy Gaps of Some III-V Semiconductors

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