Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique-Reference-Cited by-同舟云学术

Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique

Published:1988-10-15 Issue:12 Volume:38 Page:8296-8304
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ritter D.,Zeldov E.,Weiser K.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.8296/fulltext

Reference23 articles.

1. Steady‐state photocarrier grating technique for diffusion length measurement in photoconductive insulators

2. Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs

3. Ambipolar transport in amorphous semiconductors in the relaxation regime

4. Ambipolar drift-length measurement in amorphous hydrogenated silicon using the steady-state photocarrier grating technique

5. Transport in Relaxation Semiconductors

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