Deep-level defects in silicon and the band-edge hydrostatic deformation potentials
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.9392/fulltext
Reference22 articles.
1. Deep levels in semiconductors — Influence of hydrostatic pressure
2. Lattice Relaxation Accompanying Carrier Capture and Emission by Deep Electronic Levels in Semiconductors
3. Pressure dependence of impurity levels in semiconductors: The deep gold acceptor level and shallow donor and acceptor levels in silicon
4. Energy barriers and interface states at heterojunctions
5. Theory of semiconductor heterojunctions: The role of quantum dipoles
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