Spin-resonance determination of the electron effectivegvalue ofIn0.53Ga0.47As
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.8551/fulltext
Reference21 articles.
1. k→·p→perturbation theory in III-V compounds and alloys: a reexamination
2. g-factor and effective mass anisotropies in pseudomorphic strained layers
3. Optical detection of conduction-electron spin resonance in GaAs,Ga1−xInxAs, andGa1−xAlxAs
4. Optically detected conduction electron spin resonance and overhauser shift in p-GaAlAs/GaAs-heterostructures
5. Temperature Dependence of the Electron LandégFactor in GaAs
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1. Cyclotron and combined phonon-assisted resonances in the double-well heterostructure In0.65Ga0.35As/In0.52Al0.48As at megagauss magnetic fields;Physical Review B;2018-12-18
2. Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures;Semiconductors;2015-02
3. Carrier and nuclear spin pumping in strain free GaAs/AlGaAs quantum dots grown by droplet epitaxy;SPIE Proceedings;2011-09-08
4. Optical orientation of electron and nuclear spins in strain free GaAs quantum dots grown by droplet epitaxy;physica status solidi (b);2009-04
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