High-fidelity optical quantum gates based on type-II double quantum dots in a nanowire-Reference-Cited by-同舟云学术

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High-fidelity optical quantum gates based on type-II double quantum dots in a nanowire

Published:2019-04-10 Issue:16 Volume:99 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Taherkhani Masoomeh,Willatzen Morten,Denning Emil V.,Protsenko Igor E.,Gregersen Niels

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.165305/fulltext

Reference45 articles.

1. Quantum computation with quantum dots

2. Charge-Qubit Operation of an Isolated Double Quantum Dot

3. High-fidelity quantum gates in Si/SiGe double quantum dots

4. Charge noise and spin noise in a semiconductor quantum device

5. Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 μs

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1. Incomplete monolayer regime and mixed regime of nanowire growth;Physical Review Materials;2024-04-01

2. Advanced tunability of optical properties of CdS/ZnSe/ZnTe/CdSe multi-shell quantum dot by the band edge engineering;Physica E: Low-dimensional Systems and Nanostructures;2023-01

3. Atomic interactions for qubit-error compensation;Physical Review A;2022-04-21

4. Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime;physica status solidi (RRL) – Rapid Research Letters;2022-02-04

5. Coupled quantum dots: spin based qubits;Molecular Crystals and Liquid Crystals;2021-05-24

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