Electrically sign-reversible transverse g -factors of holes in droplet epitaxial GaAs/AlGaAs quantum dots under uniaxial stress-Reference-Cited by-同舟云学术

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Electrically sign-reversible transverse g -factors of holes in droplet epitaxial GaAs/AlGaAs quantum dots under uniaxial stress

Published:2017-08-23 Issue:8 Volume:96 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wu Yu-Nien,Wu Ming-Fan,Ou Ya-Wen,Chou Ying-Lin,Cheng Shun-Jen

Funder

Ministry of Science and Technology, Taiwan

Hokkaido University

National Institute for Materials Science

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.085309/fulltext

Reference49 articles.

1. Spins in few-electron quantum dots

2. Quantum computation with quantum dots

3. Driven coherent oscillations of a single electron spin in a quantum dot

4. Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots

5. Coherent Single Electron Spin Control in a Slanting Zeeman Field

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1. Effects of electrostatic environment on the electrically triggered production of entangled photon pairs from droplet epitaxial quantum dots;Scientific Reports;2019-02-07

2. Anomalous Effects of Lattice Strain and Ti3+ Interstitials on Room-Temperature Magnetic Ordering in Defect-Engineered Nano-TiO2;The Journal of Physical Chemistry C;2018-11-05

3. Optimal electromechanical control of the excitonic fine structures of droplet epitaxial quantum dots;Physical Review B;2018-10-19

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