Intrinsic inductive characteristics of resonant tunneling
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.4980/fulltext
Reference24 articles.
1. Wigner-function model of a resonant-tunneling semiconductor device
2. Transient switching behavior of the resonant-tunneling diode
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4. Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory
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