Localized states and the electronic properties of a hydrogenated defect in amorphous silicon-Reference-Cited by-同舟云学术

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Localized states and the electronic properties of a hydrogenated defect in amorphous silicon

Published:1983-09-15 Issue:6 Volume:28 Page:3246-3257
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

DiVincenzo D. P.,Bernholc J.,Brodsky M. H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.28.3246/fulltext

Reference31 articles.

1. THE ELECTRONIC STRUCTURE OF A MODEL DEFECT IN HYDROGENATED AMORPHOUS SILICON

2. Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in silicon

3. Calculations of the electronic properties of hydrogenated silicon

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2. Dense restructuring of amorphous silicon network induced by non-bonded hydrogen;Japanese Journal of Applied Physics;2018-06-27

3. Memory Function Methods in Solid State Physics;Advances in Chemical Physics;2007-03-14

4. Hydrogen Interactions with Polycrystalline and Amorphous Silicon—Theory;Semiconductors and Semimetals;1999

5. Defects ina−Sianda−Si:H: A numerical study;Physical Review B;1998-08-15

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