Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.193314/fulltext
Reference14 articles.
1. Explosive crystallization of amorphous silicon: triggering and propagation
2. Elimination of stacking faults in a silicon epitaxial layer of (100) orientation by heat treatment
3. Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms
4. Kinetics of crystal dissolution for a Stillinger-Weber model of silicon
5. Faceting at the silicon (100) crystal-melt interface: Theory and experiment
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