Saturation of the internal photoemission effect in forward biased silicon junctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.7662/fulltext
Reference7 articles.
1. Hot photo-carrier and hot electron effects in p-n junctions
2. Evidence of internal photoemission in theCO2-laser-induced negative potential in homojunctions
3. The forward biased junction: a sensitive detector for far‐infrared radiation
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1. Laser-induced hot carrier photovoltaic effects in semiconductor junctions;Progress in Quantum Electronics;2003-01
2. Experimental study of the hot-carrier impact ionization photovoltaic effect in pulsed-CO2-laser-excited silicon junctions;Semiconductor Science and Technology;2001-05-03
3. Hot carrier internal thermionic photoemission in pulsed CO/sub 2/-laser-excited n+-p silicon junctions;IEEE Journal of Quantum Electronics;1997
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