High-pressure study of the deformation potentials ofCd1−xZnxTe/ZnTe quantum wells via photoluminescence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.13256/fulltext
Reference26 articles.
1. Electronic structure of cadmium-telluride–zinc-telluride strained-layer superlattices under pressure
2. Identification of valence subbands in CdTe-Cd1−xZnxTe strained-layer quantum wells by differential spectroscopy
3. Band lineups and deformation potentials in the model-solid theory
4. Optical properties of CdTe/Cd1−xZnxTe strained-layer single quantum wells
5. Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices
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1. Finite Element Analysis of Strain Effects on Cuboidal CdTe/ZnTe Quantum Dots by Using the Eight-Band Strained k¡¤p Hamiltonian;Journal of the Korean Physical Society;2008-12-15
2. Stress-dependence tight binding study of tellurium-based II–VI semiconductors;Physics Letters A;2003-08
3. Frontier induced semi-infinite-medium (FISIM) states at semiconductor surfaces and interfaces;The European Physical Journal B;2003-02
4. Pressure dependence of photoluminescence of ZnTe/Zn1?xCdxTe strained-layer superlattice;Journal of Raman Spectroscopy;2001
5. Measurement of theIn0.52Al0.48As valence-band hydrostatic deformation potential and the hydrostatic-pressure dependence of theIn0.52Al0.48As/InP valence-band offset;Physical Review B;1995-11-15
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