Elucidation of the strong effect of an interfacial monolayer on magnetoresistance in giant magnetoresistive devices with current perpendicular to the plane-Reference-Cited by-同舟云学术

Elucidation of the strong effect of an interfacial monolayer on magnetoresistance in giant magnetoresistive devices with current perpendicular to the plane

Published:2021-04-12 Issue:14 Volume:103 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Büker Björn,Jung JinWon^ORCID,Sasaki Taisuke,Sakuraba Yuya^ORCID,Miura Yoshio^ORCID,Nakatani Tomoya,Hütten Andreas^ORCID,Hono Kazuhiro

Funder

Japan Society for the Promotion of Science

Deutscher Akademischer Austauschdienst

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.L140405/fulltext

Reference33 articles.

1. Perpendicular giant magnetoresistances of Ag/Co multilayers

2. Magnetoresistance Ratio and Resistance Area Design of CPP-MR Film for 2–5 $\hbox{Tb/in}^{2}$ Read Sensors

3. Advanced CPP-GMR Spin-Valve Sensors for Narrow Reader Applications

4. Oscillatory antiferromagnetic interlayer exchange coupling in Co2Fe(Al0.5Si0.5)/Ag/Co2Fe(Al0.5Si0.5) films and its application to trilayer magnetoresistive sensor

5. Co2MnGe-based current-perpendicular-to-the-plane giant-magnetoresistance spin-valve sensors for recording head applications

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