Strain-induced indirect-to-direct band-gap transition in bulk SnS2
Author:
Funder
Department of Science and Technology, Ministry of Science and Technology
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.075134/fulltext
Reference65 articles.
1. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides
2. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
3. Atomically ThinMoS2: A New Direct-Gap Semiconductor
4. Phonons in single-layer and few-layer MoS2and WS2
5. Preparation and Photocatalytic Behavior of MoS2 and WS2 Nanocluster Sensitized TiO2
Cited by 52 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-Performance Photodetector from p-n Junction of Vertically Aligned SnS2 and Reduced Graphene Oxide;ACS Applied Electronic Materials;2024-09-10
2. Biaxial strain modulation of the optoelectronic properties of F-doped defective monolayer SnS2;Physica Scripta;2024-04-09
3. Cobalt-doped SnS2 nanoplates for high-efficiency catalysis applications;Materials Chemistry and Physics;2024-04
4. Direct Z-scheme GeH/InSe heterostructure with high solar-to-hydrogen efficiency for photocatalytic water splitting;Chemical Physics Letters;2024-04
5. First-principles study of the effect of tensile strain on the electronic and optical properties of Al-doped monolayer SnS2;INT J MOD PHYS B;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3