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Low potential barrier height effects in magnetic tunneling junctions

Published:2007-12-26 Issue:21 Volume:76 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Cruz de Gracia E. S.,Dorneles L. S.,Schelp L. F.,Teixeira S. R.,Baibich M. N.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.214426/fulltext

Reference33 articles.

1. Tunneling magnetoresistance through a vacuum gap

2. Band Structure and Density of States Effects in Co-Based Magnetic Tunnel Junctions

3. How to Define and Calculate the Degree of Spin Polarization in Ferromagnets

4. Effects of density of states on bias dependence in magnetic tunnel junctions

5. Voltage dependence of magnetoresistance in spin dependent tunneling junctions

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1. Tunnel Мagnetoresistive Еlements for Magnetic Field Sensors;Technical Physics;2019-11

2. Tunneling anomalous Hall effect in nanogranular CoFe-B-Al-O films near the metal-insulator transition;Physical Review B;2017-04-12

3. Effect of ion-milled barriers on electron transport in micrometer-sized tunnel junctions;Journal of Physics D: Applied Physics;2014-02-19

4. Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier;Applied Physics Letters;2012-03-26

5. Dielectric breakdown in AlOxtunnelling barriers;Journal of Physics D: Applied Physics;2011-03-16

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