Surface-field-induced feature in the quantum yield of silicon near 3.5 eV
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.1262/fulltext
Reference18 articles.
1. New calculations of the quantum yield of silicon in the near ultraviolet
2. Soft-threshold lucky drift theory of impact ionisation in semiconductors
3. The effect of electron‐hole plasmas on the density of states of silicon and GaAs
4. Band-gap narrowing in the space-charge region of heavily doped silicon diodes
5. Transition rate for impact ionization in the approximation of a parabolic band structure
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