Unconventional anomalous Hall effect from antiferromagnetic domain walls ofNd2Ir2O7thin films-Reference-Cited by-同舟云学术

Unconventional anomalous Hall effect from antiferromagnetic domain walls ofNd2Ir2O7thin films

Published:2018-09-04 Issue:12 Volume:98 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kim Woo Jin,Gruenewald John H.,Oh Taekoo,Cheon Sangmo,Kim Bongju,Korneta Oleksandr B.,Cho Hwanbeom,Lee Daesu,Kim Yoonkoo,Kim Miyoung,Park Je-Geun,Yang Bohm-Jung,Seo Ambrose,Noh Tae Won

Funder

National Science Foundation

National Research Foundation of Korea

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.125103/fulltext

Reference44 articles.

1. Conduction at domain walls in oxide multiferroics

2. Anisotropic conductance at improper ferroelectric domain walls

3. Conduction of Topologically Protected Charged Ferroelectric Domain Walls

4. Domain wall nanoelectronics

5. Interface-driven topological Hall effect in SrRuO 3 -SrIrO 3 bilayer

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