Raman scattering in single-variant spontaneously orderedGaInP2
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.12994/fulltext
Reference50 articles.
1. OMVPE growth of AlGaInP/GaxIn1−xP strained quantum well structures and their applications to visible laser diodes
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3. Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer
4. 29.5%‐efficient GaInP/GaAs tandem solar cells
5. Growth and characterization of GaInP unicompositional disorder‐order‐disorder quantum wells
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