Diffraction-anomalous-fine-structure spectroscopy applied to the study of III-V strained semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.5479/fulltext
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1. Cavity length dependence of the wavelength of strained‐layer InGaAs/GaAs lasers
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3. Critical Stresses forSixGe1−xStrained-Layer Plasticity
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