Ga-induced atom wire formation and passivation of stepped Si(112)-Reference-Cited by-同舟云学术

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Ga-induced atom wire formation and passivation of stepped Si(112)

Published:2005-09-29 Issue:12 Volume:72 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Snijders P. C.,Rogge S.,González C.,Pérez R.,Ortega J.,Flores F.,Weitering H. H.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.125343/fulltext

Reference37 articles.

1. Electrical transport through carbon nanotube junctions created by mechanical manipulation

2. High-resolution photoemission in low-dimensional conductors and superconductors

3. One-dimensional Fermi liquids

4. One-dimensional electronic states at surfaces

5. Chains of gold atoms with tailored electronic states

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1. A HfC nanowire point electron source with oxycarbide surface of lower work function for high-brightness and stable field-emission;Nano Research;2020-05-12

2. Sn-induced 1D nanostructure formed on Si(5 5 12)-2  ×  1: Faceting followed by preferential adsorption;Surface Science;2019-10

3. Ga and In adsorption on Si(112): Adsorption sites and superstructure;Physical Review B;2017-03-31

4. Atomically flat reconstructed rutile TiO2(001) surfaces for oxide film growth;Applied Physics Letters;2016-02-29

5. Growth kinetics of indium metal atoms on Si(1 1 2) surface;Materials Research Bulletin;2015-12

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