Electron-drag effect in Si metal-oxide-semiconductor devices with thin oxide layers
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.125338/fulltext
Reference57 articles.
1. New phenomena in coupled transport between 2D and 3D electron-gas layers
2. Mutual friction between parallel two-dimensional electron systems
3. Electron-electron scattering between parallel two-dimensional electron gases
4. Evidence for virtual-phonon exchange in semiconductor heterostructures
5. Study of the carrier density dependence of the frictional drag between closely spaced two-dimensional electron gases
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