Intrasubband and intersubband transitions in lightly and heavily dopedGaAs/AlxGa1−xAsmultiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.12388/fulltext
Reference24 articles.
1. Tunable long‐wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy
2. 10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera
3. Extended long‐wavelength λ=11–15‐μm GaAs/AlxGa1−xAs quantum‐well infrared photodetectors
4. Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector
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