Identification of the isolated arsenic antisite defect in electron-irradiated gallium arsenide and its relation to theEL2 defect
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.1481/fulltext
Reference24 articles.
1. Photocapacitance quenching effect for “oxygen” in GaAs
2. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
3. Stress splitting of theEL2 zero-phonon line: Need for reinterpretation of the main optical transition
4. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
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