Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory-Reference-Cited by-同舟云学术

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Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory

Published:2017-02-07 Issue:7 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Brázdová Veronika,Bowler David R.,Sinthiptharakoon Kitiphat,Studer Philipp,Rahnejat Adam,Curson Neil J.,Schofield Steven R.,Fisher Andrew J.

Funder

Engineering and Physical Sciences Research Council

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.075408/fulltext

Reference42 articles.

1. Prospects for atomically ordered device structures based on STM lithography

2. Atomically Precise Placement of Single Dopants in Si

3. STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si:P quantum computer

4. Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

5. Atomic-Scale, All Epitaxial In-Plane Gated Donor Quantum Dot in Silicon

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1. Challenges to extracting spatial information about double P dopants in Si from STM images;Scientific Reports;2024-08-05

2. Topological states in honeycomb arrays of implanted acceptors in semiconductors;New Journal of Physics;2024-06-01

3. Atomically Precise Manufacturing of Silicon Electronics;ACS Nano;2024-02-20

4. Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon;Advanced Electronic Materials;2023-03-25

5. Scanning tunneling microscopy of buried dopants in silicon: images and their uncertainties;npj Computational Materials;2022-08-23

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