Interface luminescence of GaAs/Ga1−xAlxAs heterostructures: Threshold effect of the interface formation conditions-Reference-Cited by-同舟云学术

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Interface luminescence of GaAs/Ga1−xAlxAs heterostructures: Threshold effect of the interface formation conditions

Published:1995-06-15 Issue:23 Volume:51 Page:16801-16806
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bessolov V. N.,Evstropov V. V.,Lebedev M. V.,Rossin V. V.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.16801/fulltext

Reference23 articles.

1. Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions

2. New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface

3. Optical spectroscopy of two-dimensional electrons inGaAs−AlxGa1−xAssingle heterojunctions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excited states of two-dimensional excitons in quantum wells;Canadian Journal of Physics;2002-07-01

2. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001

3. Inner‐Shell Electron Excitation Effect on the Structural Change in Amorphous and Crystalline GaAs with Brilliant X‐Ray Irradiation Using Synchrotron Radiation;Journal of The Electrochemical Society;1998-09-01

4. Interface exciton luminescence: An indication of interface inhomogeneities in single GaAs/GaAlAs heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-11

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